Interplay between magnetism and charge transport in antiperovskite manganese nitrides: Extremely low temperature coefficient of resistance due to strong magnetic scattering
Interplay between magnetism and charge transport in antiperovskite manganese nitrides: Extremely low temperature coefficient of resistance due to strong magnetic scattering
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DOI：
10.1063/1.3673425
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发表时间：
2012-02
影响因子：
3.2
通讯作者：
M. Hadano;A. Ozawa;K. Takenaka;N. Kaneko;T. Oe;C. Urano
中科院分区：
文献类型：
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作者：
M. Hadano;A. Ozawa;K. Takenaka;N. Kaneko;T. Oe;C. Urano
最近发现的低温度系数的电阻（低TCR）在Mn 3Ag 1-xCuxN证明了这类锰氧化物的特殊的磁性和电子状态。尽管它的整体金属特性，一个广泛的最大值出现在顺磁区域的温度-电阻率曲线，并实现了极低的TCR在温度窗口，包括室温。峰值温度可以通过Cu含量x来调节。这显然与磁转变温度有关。这些奇特的行为可能是强磁散射导致相干准粒子态坍缩的结果。我们讨论了磁电阻的磁性和电荷输运之间的相互作用。
The recently discovered low temperature coefficient of resistance (low TCR) in Mn3Ag1-xCuxN exemplifies the peculiar magnetic and electronic states of this class of manganites. Despite its overall metallic character, a broad maximum appears in the temperature–resistivity curve in the paramagnetic region, and extremely low TCR is achieved over a temperature window that includes room temperature. The peak temperature can be tuned via Cu content x. It is apparently related to the magnetic transition temperature. These peculiar behaviors are possibly a result of the collapse of coherent quasiparticle states by strong magnetic scattering. We discuss the interplay between magnetism and charge transport in terms of magnetoresistance.