Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films
Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films
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DOI：
10.1063/1.3130104
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发表时间：
2009-05
影响因子：
3.2
通讯作者：
Xiaoli Li;Xiaohong Xu;Z. Quan;Jun Guo;Hai-shun Wu;G. Gehring
中科院分区：
文献类型：
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作者：
Xiaoli Li;Xiaohong Xu;Z. Quan;Jun Guo;Hai-shun Wu;G. Gehring
采用脉冲激光沉积法在c切蓝宝石衬底上制备了Zn0.97Cu0.03O薄膜，研究了薄膜的生长特性。所有的薄膜都表现出室温铁磁性。低温低压下沉积的样品具有较大的饱和磁化强度。此外，在真空和Zn蒸气中退火的薄膜中观察到Ms的增强。然而，在空气中退火后，铁磁性显着降低。结果表明，在ZnCuO稀磁半导体的室温铁磁性中，由富锌或缺氧气氛引入的巡游电子可能起着重要的作用.这与载流子诱导铁磁性是一致的。磁化强度强烈地依赖于自由载流子的外观，并且对它们是否由VO或/和Zn 1引起相对不敏感。
Zn0.97Cu0.03O films were prepared by pulsed-laser deposition on c-cut sapphire substrates under various conditions in order to investigate the growth-dependent properties of the films. All the films exhibit room temperature ferromagnetism. Samples deposited at low temperature and low pressure show large saturation magnetization (Ms). Moreover, the enhancement of Ms was observed in films annealed both in vacuum and in Zn vapor. However, postannealing in air led to the remarkable reduction of ferromagnetism. The results show that the itinerant electrons introduced by oxygen-deficient or Zn-rich atmospheres may play a significant role in room temperature ferromagnetism observed in this ZnCuO dilute magnetic semiconductor. It is consistent with carrier-induced ferromagnetism. The magnetization strongly depends on the appearance of free carriers and is relatively insensitive to whether they arose from VO or/and Zni.