Dependence of Process Characteristics on Atomic-Step Density in Catalyst-Referred Etching of 4H-SiC(0001) Surface
Dependence of Process Characteristics on Atomic-Step Density in Catalyst-Referred Etching of 4H-SiC(0001) Surface
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DOI：
10.1166/jnn.2011.3917
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发表时间：
2011-04-01
影响因子：
--
通讯作者：
Yamauchi, Kazuto
中科院分区：
文献类型：
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作者：
Okamoto, Takeshi;Sano, Yasuhisa;Yamauchi, Kazuto
催化剂相关刻蚀（CARE）是一种新型的无磨料平面化方法。CARE处理的4 H-SiC（0001）表面非常平坦，整个晶片上没有损坏。它们由单双层高度的原子台阶和原子平坦的台阶组成。这表明，蚀刻性能主要取决于衬底表面的原子台阶密度。我们使用轴上和8度离轴基板，以调查的处理特性，影响这些基板的原子步密度。我们发现两个衬底的去除率和原子台阶密度之间有很强的相关性。对于轴上基板，去除率增加而增加的表面粗糙度，这与增加原子台阶密度增加。去除速率比与两个衬底的原子台阶密度比近似相同。
Catalyst-referred etching (CARE) is a novel abrasive-free planarization method. CARE-processed 4H-SiC(0001) surfaces are extremely flat and undamaged over the whole wafer. They consist of single-bilayer-height atomic steps and atomically flat terraces. This suggests that the etching properties depend principally on the atomic-step density of the substrate surface. We used on-axis and 8 degrees off-axis substrates to investigate the processing characteristics that affect the atomic-step density of these substrates. We found a strong correlation between the removal rate and the atomic-step density of the two substrates. For the on-axis substrate, the removal rate increased with increasing surface roughness, which increases with an increasing atomic-step density. The removal rate ratio is approximately the same as the atomic-step density ratio of the two substrates.