Simulation of critical IC fabrication processes using advanced physical and numerical methods
Simulation of critical IC fabrication processes using advanced physical and numerical methods
复制标题
使用先进的物理和数值方法模拟关键 IC 制造工艺
DOI：
10.1109/jssc.1985.1052279
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发表时间：
1985
影响因子：
3.1
通讯作者：
H. Potzl
中科院分区：
文献类型：
--
作者：
W. Jungling;P. Pichler;S. Selberherr;E. Guerrero;H. Potzl
集成电路制造的关键步骤模拟的一维和二维计算机程序，使用先进的物理模型。我们的程序可以处理任意数量的物理量，如掺杂剂浓度、空位、杂质和团簇浓度、静电势等，而且它们很容易允许所考虑的物理模型的交换或变化。作为典型的应用，研究了一维和二维的耦合扩散现象以及动态砷团簇。以不同温度下不同掺杂浓度的As-B扩散为例，研究了零空间电荷近似模型和精确Poisson方程解所引起的差异。一个动态的集群模型开发的模拟热退火的As晶体的激光退火实验的测量数据进行了比较。一个简短的概述的数学和数值计算的问题，以显示最新的过程模拟所需的复杂程度。
Critical steps of IC fabrication are simulated by one- and two-dimensional computer programs using advanced physical models. Our codes deal with an arbitrary number of physical quantities such as concentrations of dopants, vacancies, interstitials and clusters, the electrostatic potential, and so on. Furthermore, they easily permit the exchange or variation of the physical models under consideration. As typical applications phenomena of coupled diffusion in one and two dimensions and dynamic arsenic clustering are investigated. The differences caused by the models of the zero space-charge approximation and the solution of the exact Poisson equation are studied by examples of As-B diffusion with various doping concentrations at different temperatures. A dynamic cluster model developed for the simulation of thermally annealed As implantations is compared to measured data of laser annealing experiments. A short outline of the mathematical and the numerical problems is given to show the amount of sophistication necessary for up-to-date process simulation.