Development of uniform CdTe pixel detectors based on Caltech ASIC
Development of uniform CdTe pixel detectors based on Caltech ASIC
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基于加州理工学院 ASIC 的均匀 CdTe 像素探测器的开发
DOI：
10.1117/12.552598
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发表时间：
2004
影响因子：
3.5
通讯作者：
F. Harrison
中科院分区：
文献类型：
--
作者：
K. Oonuki;H. Inoue;K. Nakazawa;T. Mitani;Takaaki Tanaka;Tadayuki Takahashi;C. M. H. Chen;W. Cook;F. Harrison
我们已经研制出尺寸为23.7x13.0mm2，像素尺寸为448x448μm2的大尺寸镉镉探测器。该探测器基于最新的技术，包括均匀的CdTe单晶、二维ASIC和螺柱凸点键合，将CdTe表面上的像素电极连接到ASIC。从1056个像素中的1051个像素获得了良好的光谱。当探测器工作在-50°C时，14keV和60keV的能量分辨率分别为0.67keV和0.99keV。该探测器在-50°C和-20°C的工作温度下均能稳定工作一周。该探测器还具有很高的均匀性：所有像素的峰值位置都在0.82%以内，在-50°C的温度下，能量分辨率的平均值为1.04keV。
We have developed a large CdTe pixel detector with dimensions of 23.7 x 13.0 mm2 and a pixel size of 448 x 448 μm2. The detector is based on recent technologies of an uniform CdTe single crystal, a two-dimensional ASIC, and stud bump-bonding to connect pixel electrodes on the CdTe surface to the ASIC. Good spectra are obtained from 1051 pixels out of total 1056 pixels. When we operate the detector at -50°C, the energy resolution is 0.67 keV and 0.99 keV at 14 keV and 60 keV, respectively. Week-long stability of the detector is confirmed at operating temperatures of both -50°C and -20°C. The detector also shows high uniformity: the peak positions for all pixels agree to within 0.82%, and the average of the energy resolution is 1.04 keV at a temperature of -50°C. When we normalized the peak area by the total counts detected by each pixel, a variation of 2.1% is obtained.