Silica-coating of AgI semiconductor nanoparticles
Silica-coating of AgI semiconductor nanoparticles
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DOI:
10.1016/j.colsurfa.2004.10.007
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发表时间:
2004-12
期刊:
影响因子:
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通讯作者:
Yoshio Kobayashi;K. Misawa;M. Takeda;Masaki Kobayashi;M. Satake;Y. Kawazoe;N. Ohuchi;A. Kasuya;M. Konno
中科院分区:
文献类型:
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作者:
Yoshio Kobayashi;K. Misawa;M. Takeda;Masaki Kobayashi;M. Satake;Y. Kawazoe;N. Ohuchi;A. Kasuya;M. Konno
A method for silica-coating of AgI nanoparticles is proposed, which applies Stöber method in the presence of a silane coupling agent, 3-mercaptopropyltrimethoxysilane (MPS), with the use of dimethylamine (DMA) catalyst for alkoxide hydrolysis. The AgI nanoparticles were prepared from AgClO4and KI. The silica-coating was performed with 0–2.3×10−5M MPS, 11–20M water, 0–0.1M DMA and 0.0004–0.15M tetraethyl orthosilicate (TEOS). The addition of MPS suppressed generation of free silica particles and improved uniformity of shell thickness. Silica shells were formed at water concentrations of 11–15M, but excess water (20M) caused aggregation of free silica particles, and resulted in formation of gel network. The silica shell thickness could be varied from 3 to 33.0nm as the TEOS concentration was increased from 0.0004 to 0.04M at 4.5×10−6M MPS under the condition of 11M water and 0.01M DMA.