Cesium encapsulation in single-walled carbon nanotubes via plasma ion irradiation: Application to junction formation and ab initio investigation
Cesium encapsulation in single-walled carbon nanotubes via plasma ion irradiation: Application to junction formation and ab initio investigation
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DOI：
10.1103/physrevb.68.075410
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发表时间：
2003-08-15
影响因子：
3.7
通讯作者：
Kawazoe, Y
中科院分区：
文献类型：
--
作者：
Jeong, GH;Farajian, AA;Kawazoe, Y
使用不同于传统的气相掺杂方法的方法，Cs正离子在磁化等离子体柱照射负偏置的衬底上，该衬底上覆盖有分散的单壁碳纳米管（SWNTs）。扫描透射电子显微镜中的Z-对比度法观察到Cs离子在单壁碳纳米管内部明显存在，证明了碱金属包覆单壁碳纳米管的形成。从头算能带结构和态密度的轻和重掺杂制度表明使用Cs掺杂的单壁碳纳米管作为掺杂结的可能性，在纳米电子学中具有潜在的应用。这是支持的直接实验观察一个实际的结。
Using an approach different from the conventional vapor doping methods, Cs positive ions in a magnetized-plasma column are irradiated upon a negatively biased substrate which is covered with dispersed single-walled carbon nanotubes (SWNTs). The Cs ions are evidently observed inside SWNTs by the Z-contrast method in scanning transmission electron microscopy, demonstrating the formation of alkali-metal encapsulating SWNTs. Ab initio band structures and density of states for the light and heavy doping regimes indicate the possibility of using Cs-doped SWNTs as doped junctions, with potential application in nanoelectronics. This is supported by the direct experimental observation of an actual junction.