Investigation of Sputtering Damage in SrRuO3 Films Prepared by Sputtering with Raman and X-ray Photoemission Spectroscopies
Investigation of Sputtering Damage in SrRuO3 Films Prepared by Sputtering with Raman and X-ray Photoemission Spectroscopies
复制标题
用拉曼和 X 射线光电发射光谱研究溅射制备的 SrRuO3 薄膜的溅射损伤
DOI：
10.1143/jjap.51.09la19
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
T. Yamamoto
中科院分区：
文献类型：
--
作者：
T. Tai;M. Nishide;M. Matsuoka;T. Kamo; H. Funakubo ;T. Katoda ;H. Shima ; K. Nishida ;T. Yamamoto
利用拉曼光谱和x射线光电发射光谱（XPS）研究了不同生长压力下射频磁控溅射制备的srruo3 （SRO）薄膜的溅射损伤。随着生长压力的降低，与Ru和Sr离子相关的声子模式发生了变化，XPS谱发生了位移。这些结果表明，在低生长压力溅射条件下，当SRO薄膜发生溅射损伤时，Sr离子与Ru离子在SRO薄膜中发生了交换。反离子含量随生长压力的降低而增加。SRO薄膜的电阻率随反离子含量的增加而增加。溅射损伤动力学表明，在SRO薄膜中形成了相反的Sr和Ru离子。
Sputtering damage of SrRuO 3 (SRO) films prepared by RF magnetron sputtering under various growth pressures was investigated by Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Phonon modes that were related to Ru and Sr ions changed and XPS spectra shifted with decreasing growth pressure. These results indicate that Sr ions switched place with Ru ions in SRO films when the SRO films had sputtering damage under low-growth-pressure sputtering condition as determined from Raman spectroscopy and XPS measurement. The antisite ion content increased with decreasing growth pressure. The resistivity of the SRO films also increased with increasing antisite ion content. The dynamics of sputtering damage revealed that the antisite Sr and Ru ions were formed in SRO films.