Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation
Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation
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DOI：
10.1002/pssa.201200716
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发表时间：
2013-03-01
影响因子：
2
通讯作者：
Sumiya, Masatomo
中科院分区：
文献类型：
--
作者：
Lozac'h, Mickael;Nakano, Yoshitaka;Sumiya, Masatomo
制备了透明导电聚合物/n-GaN肖特基结，研究了iii - iv氮化物薄膜在光照射下的深层缺陷。在反向偏置10V时，漏电流低至106Acm2。在黑暗条件下，肖特基势垒高度达到1.15eV，在归一化太阳光谱AM1.5G下，填充因子达到0.71，开路电压为0.72V，短路电流为0.37mAcm2。深能级光谱分析表明，在PEDOT:PSS和n-GaN的界面上存在镓空位（VGa）和/或相关配合物杂质（VGaON和/或VGaCN）。从深能级缺陷集中的角度讨论了肖特基性质和光电性质。PEDOT:PSS层上具有金属前网格的PEDOT:PSS/ iii型氮化物肖特基结示意图。
Transparent conducting polymer/n-GaN Schottky junction was fabricated in order to study deep level defects of IIIV nitride films under light irradation. The leakage current was as low as 106Acm2 at reverse bias of 10V. The Schottky barrier height reaches 1.15eV under dark condition and under normalized solar spectrum AM1.5G the fill factor was up to 0.71 with an open-circuit voltage of 0.72V and a short-circuit current of 0.37mAcm2. Deep level optical spectroscopy analysis revealed the presence of gallium vacancies (VGa) and/or related complexes impurities (VGaON and/or VGaCN) at the interface between PEDOT:PSS and n-GaN. The Schottky and photovoltaic properties are discussed in term of deep level defects concentration. Schematic illustration of PEDOT:PSS/IIIV nitride Schottky junction with a metallic front grid on PEDOT:PSS layer.