Organic Power Electronics: Transistor Operation in the kA/cm(2) Regime.

Organic Power Electronics: Transistor Operation in the kA/cm(2) Regime.
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DOI:
10.1038/srep44713
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发表时间:
2017-03-17
期刊:
影响因子:
4.6
通讯作者:
Leo K
Leo K
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Klinger MP;Fischer A;Kaschura F;Widmer J;Kheradmand-Boroujeni B;Ellinger F;Leo K

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尽管有机薄膜晶体管具有诸如灵活性等有趣的特征,但由于与跳跃传输相关的有机半导体的低迁移率,有机薄膜晶体管在商业上仍然落后。此外,有机晶体管通常比无机晶体管具有更大的沟道长度,因为高分辨率结构在低成本生产方案中不可用。在这里,我们提出了一种有机渗透基极晶体管(OPBT),尽管处理极其简单,没有任何高分辨率结构,但其性能却超出了迄今为止使用有机半导体所能达到的性能。凭借超过 1 kA cm−2 的电流密度和接近 100 MHz 的开关速度,它们开启了有机电力电子领域。找到物理极限和仅为 0.06 cm2 V−1 s−1 的有效迁移率,如果开发出针对其几何形状优化的新材料,这种 OPBT 器件架构将具有更大的潜力。
In spite of interesting features as flexibility, organic thin-film transistors have commercially lagged behind due to the low mobilities of organic semiconductors associated with hopping transport. Furthermore, organic transistors usually have much larger channel lengths than their inorganic counterparts since high-resolution structuring is not available in low-cost production schemes. Here, we present an organic permeable-base transistor (OPBT) which, despite extremely simple processing without any high-resolution structuring, achieve a performance beyond what has so far been possible using organic semiconductors. With current densities above 1 kA cm−2 and switching speeds towards 100 MHz, they open the field of organic power electronics. Finding the physical limits and an effective mobility of only 0.06 cm2 V−1 s−1, this OPBT device architecture has much more potential if new materials optimized for its geometry will be developed.