Evaluation of gallium nitride transistors in high frequency resonant and soft-switching DC-DC converters
Evaluation of gallium nitride transistors in high frequency resonant and soft-switching DC-DC converters
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DOI：
10.1109/apec.2014.6803349
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发表时间：
2014-03
期刊：
影响因子：
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通讯作者：
D. Reusch;J. Strydom
中科院分区：
文献类型：
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作者：
D. Reusch;J. Strydom
氮化镓（GaN）基功率器件的出现提供了实现比老化硅（Si）功率MOSFET更高效率和更高开关频率的潜力。在本文中，我们将评估氮化镓晶体管在高频谐振和软开关应用中提高效率和输出功率密度的能力。为了通过实验验证在高频谐振转换器中用增强型GaN晶体管（埃根® FET）取代Si MOSFET的好处，使用Si和GaN功率器件比较了在1.2 MHz开关频率和高达400 W输出功率下工作的48 V至12 V非稳压隔离总线转换器原型。
The emergence of gallium nitride (GaN) based power devices offers the potential to achieve higher efficiencies and higher switching frequencies than possible with aging silicon (Si) power MOSFETs. In this paper, we will evaluate the ability of gallium nitride transistors to improve efficiency and output power density in high frequency resonant and soft-switching applications. To experimentally verify the benefits of replacing Si MOSFETs with enhancement mode GaN transistors (eGaN®FETs) in a high frequency resonant converter, 48 V to 12 V unregulated isolated bus converter prototypes operating at a switching frequency of 1.2 MHz and an output power of up to 400W are compared using Si and GaN power devices.