Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors
Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors
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DOI：
10.1088/1361-6633/aa56f0
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发表时间：
2017-04
影响因子：
18.1
通讯作者：
W. Weber;T. Mikolajick
中科院分区：
文献类型：
--
作者：
W. Weber;T. Mikolajick
在过去的15年中，1D IV族半导体结构的电子学领域的研究引起了越来越多的关注。独特的1D电子输运特性与高度集成的硅和锗技术的成熟材料专有技术的出色结合，为增强最先进的电子产品带来了希望。除了提供可以使传统场效应晶体管达到最大缩放极限的导电沟道之外，1D IV族纳米线的物理特性赋予了新的器件原理。这种非传统的硅和锗纳米线器件凭借其独特的开关行为和更高的表现价值成为超越互补金属氧化物半导体（CMOS）计算的竞争者。这篇综述向读者传达了硅和锗纳米线物理学的系统概括和分析，以及由硅和锗纳米线构建的最相关的CMOS和CMOS类器件，包括反转模式，无结，陡斜率，量子阱和可重构晶体管。
Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.