Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths
Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths
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DOI：
10.1109/tns.2020.3035172
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发表时间：
2020-12-01
影响因子：
1.8
通讯作者：
Ziegler, T.
中科院分区：
文献类型：
--
作者：
Lv, P.;Cao, G. F.;Ziegler, T.
硅光电倍增管（SiPM）的真空紫外（VUV）反射率的表征对于大规模SiPM光电探测器系统具有重要意义。我们报道了由Fondazionc Bruno Kessler（FBK）和Hamamatsu Photonics K.K.制造的SiPM在真空中镜面反射率的角度依赖性。(HPK)在120至280 nm的波长范围内。沉积在FBK SiPM表面上的二氧化硅薄膜的折射率和消光系数是从具有与SiPM相同的沉积氧化膜的FBK硅片的反射率数据导出的。还在193 nm处测量了SiPM的漫反射率。我们使用的光学常数的VUV光谱依赖预测FBK硅晶片和FBK SiPM在液体氙的反射率。
Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.