Large voltage-induced magnetic anisotropy change in a few atomic layers of iron
Large voltage-induced magnetic anisotropy change in a few atomic layers of iron
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DOI：
10.1038/nnano.2008.406
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发表时间：
2009-03-01
影响因子：
38.3
通讯作者：
Suzuki, Y.
中科院分区：
文献类型：
--
作者：
Maruyama, T.;Shiota, Y.;Suzuki, Y.
在旋转型的领域，研究人员使用自旋极化电流（1-3）来操纵磁化。另一个选择是在铁磁材料中使用电压诱导的对称变化来引起磁化或磁各向异性的变化（4-14）。但是，在使用超吸收功耗的存储器设备中，需要对效率进行显着提高。在这里，我们表明，在BCC Fe（001）/MGO（001）交界处的磁各向异性中，相对较小的电场（小于100 mV nm（-1））可能会导致较大的变化（类似于40％）。该作用暂时归因于相邻Mgo屏障的Fe原子的3D轨道相对占用的变化。模拟证实，使用此处显示的各向异性变化可以使用磁性隧道连接中的电压控制的磁化切换，这可能用于开发低功率逻辑设备和非挥发性存储器单元。
In the field of spintronics, researchers have manipulated magnetization using spin-polarized currents(1-3). Another option is to use a voltage-induced symmetry change in a ferromagnetic material to cause changes in magnetization or in magnetic anisotropy(4-14). However, a significant improvement in efficiency is needed before this approach can be used in memory devices with ultralow power consumption. Here, we show that a relatively small electric field (less than 100 mV nm(-1)) can cause a large change (similar to 40%) in the magnetic anisotropy of a bcc Fe(001)/MgO(001) junction. The effect is tentatively attributed to the change in the relative occupation of 3d orbitals of Fe atoms adjacent to the MgO barrier. Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.