Schottky Junction Properties of Graphene with Nitrogen and Gallium Polar Freestanding GaN
Schottky Junction Properties of Graphene with Nitrogen and Gallium Polar Freestanding GaN
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石墨烯与氮和镓极性独立式 GaN 的肖特基结特性
DOI：
10.1109/nano46743.2019.8993910
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
G. Kalita
中科院分区：
文献类型：
--
作者：
A. Ranade,R. Mahyavanshi;P. Desai;M. Tanemura;G. Kalita
石墨烯等二维（2D）层状材料与传统半导体的集成对于开发高性能光电子和其他电子器件具有重要意义。具有直接带隙（~3.4 eV）的氮化镓（GaN）在光电和功率器件中得到了广泛的应用。近年来，采用液相外延法生长出了独立式氮化镓。氮化镓器件的性能会随着氮(N)和镓（Ga）极性表面的变化而发生显著变化。在目前的工作中，我们探索了石墨烯与N和Ga极性独立GaN的肖特基结性质。有趣的是，ga极性石墨烯/GaN异质结构比n极性石墨烯/GaN异质结构表现出更高的光响应性。
Integration of two-dimensional (2D) layered materials like graphene with conventional semiconductors is of great interest to develop high performance optoelectronics and other electronic devices. Gallium nitride (GaN) with a direct bandgap (~3.4 eV) has been widely explored for optoelectronic and power device applications. Recently, freestanding GaN has been grown by liquid phase epitaxy. GaN device properties can be significantly changed depending on the nitrogen (N) and gallium (Ga) polar surface. In the present work, we have explored the Schottky junction properties of graphene with N and Ga polar freestanding GaN. Interestingly, Ga-polar graphene/GaN heterostructure showed higher photoresponsivity than the N-polar graphene/GaN heterostructure.