Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing
Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing
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DOI：
10.1021/acsnano.2c00079
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发表时间：
2022-02-22
期刊：
影响因子：
17.1
通讯作者：
Hao, Yue
中科院分区：
文献类型：
--
作者：
Luo, Zheng-Dong;Zhang, Siqing;Hao, Yue
内存计算与冯诺依曼架构截然不同，有望大幅减少数据密集型计算的能源和时间消耗。随着硅互补金属氧化物半导体 (CMOS) 技术面临的挑战越来越大，开发内存计算硬件将需要不同的平台来在材料和设备级别提供显着增强的功能。在这里，我们探索双栅极二维铁电场效应晶体管（2D FeFET）作为形成非易失性逻辑门和人工突触的基本器件，同时解决数字和模拟空间中的内存计算问题。通过双铁电耦合效应使二维晶体管的静电行为多样化，在单极 (MoS2) 和双极 (MoTe2) FeFET 中获得了丰富的逻辑功能，包括线性 (AND、OR) 和非线性 (XNOR) 门。将两种类型的 2D FeFET 结合在异构平台中，通过面积高效的双晶体管结构成功构建了一个重要的计算电路，即半加器。此外，在相同的设备结构下，在设备层面展示了几个关键的突触功能，并在系统层面模拟了人工神经网络，体现了其神经形态计算的潜力。这些发现凸显了双栅极 2D FeFET 在开发能够进行数字和模拟计算的多功能内存计算硬件方面的前景。
In-memory computing featuring a radical departure from the von Neumann architecture is promising to substantially reduce the energy and time consumption for data-intensive computation. With the increasing challenges facing silicon complementary metal-oxide-semiconductor (CMOS) technology, developing in-memory computing hardware would require a different platform to deliver significantly enhanced functionalities at the material and device level. Here, we explore a dual-gate two-dimensional ferroelectric field-effect transistor (2D FeFET) as a basic device to form both nonvolatile logic gates and artificial synapses, addressing in-memory computing simultaneously in digital and analog spaces. Through diversifying the electrostatic behaviors in 2D transistors with the dual-ferroelectric-coupling effect, rich logic functionalities including linear (AND, OR) and nonlinear (XNOR) gates were obtained in unipolar (MoS2) and ambipolar (MoTe2) FeFETs. Combining both types of 2D FeFETs in a heterogeneous platform, an important computation circuit, i.e., a half-adder, was successfully constructed with an area-efficient two-transistor structure. Furthermore, with the same device structure, several key synaptic functions are shown at the device level, and an artificial neural network is simulated at the system level, manifesting its potential for neuromorphic computing. These findings highlight the prospects of dual-gate 2D FeFETs for the development of multifunctional in-memory computing hardware capable of both digital and analog computation.