Investigation on the parallel operation of discrete SiC BJTs and JFETs
Investigation on the parallel operation of discrete SiC BJTs and JFETs
复制标题
分立 SiC BJT 和 JFET 并联运行的研究
DOI：
--
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
L. Tolbert
中科院分区：
文献类型：
--
作者：
M. Chinthavali;P. Ning;Yutian Cui;L. Tolbert
本文分析了单个分立碳化硅（SiC）JFET和BJT器件及其并联工作。在很宽的温度范围内获得了器件的静态和动态特性，以研究器件参数的缩放。静态参数，如导通电阻，阈值电压，电流增益，寄生电流和漏电流被提取，以显示这些参数将如何随着器件的寄生而扩展。文中还详细分析了开关瞬态过程中开关器件之间的动态均流以及不同电压和电流下的能量损耗。研究了栅极驱动器对MOSFET器件瞬态行为的影响，结果表明，器件的更快开关速度可能导致瞬态期间共享电流的失配。
This paper presents an analysis of single discrete silicon carbide (SiC) JFET and BJT devices and their parallel operation. The static and dynamic characteristics of the devices were obtained over a wide range of temperature to study the scaling of device parameters. The static parameters like on-resistance, threshold voltage, current gains, transconductance, and leakage currents were extracted to show how these parameters would scale as the devices are paralleled. A detailed analysis of the dynamic current sharing between the paralleled devices during the switching transients and energy losses at different voltages and currents is also presented. The effect of the gate driver on the device transient behavior of the paralleled devices was studied, and it was shown that faster switching speeds of the devices could cause mismatches in current shared during transients.