Development of a cosputter-evaporation chamber for Fe-Ga films
Development of a cosputter-evaporation chamber for Fe-Ga films
复制标题
Fe-Ga 薄膜共溅射蒸发室的开发
DOI：
10.1116/1.2924416
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
M. Gibbs
中科院分区：
文献类型：
--
作者：
N. Morley;S. Yeh;S. Rigby;A. Javed;M. Gibbs
采用直流磁控溅射法制备了Fe(1−x)Gax （0<x<0.4）薄膜。同时溅射和蒸发已经发展成为合金靶溅射的一种替代方法，其中对成分变化的需求很难解决。这项新技术允许溅射所能提供的合成自由，但减轻了无法溅射镓的问题。也避免了制备合金靶材的需要。为了控制薄膜中Ga的浓度，改变了蒸发速率、直流磁控管功率和腔压力。对制备的薄膜进行了磁性和微结构性能的研究。制备的Fe - ga薄膜的磁致伸缩常数比相同厚度的Fe薄膜提高了5倍。
A new deposition technique involving the dc magnetron sputtering of Fe simultaneously with Ga evaporation has been developed to fabricate thin Fe(1−x)Gax (0<x<0.4) films. Simultaneous sputtering and evaporation has been developed as an alternative to the sputtering of alloy targets, where the need for compositional variation can be hard to address. The new technique allows the freedom of composition that cosputtering would offer, but mitigates the issue of being unable to sputter Ga. The need for the preparation of alloy targets is also avoided. To control the concentration of the Ga in the films, the evaporation rate, the dc magnetron power, and the chamber pressure were varied. The films fabricated were studied to determine their magnetic and microstructural properties. The Fe–Ga films fabricated had magnetostriction constants which had increased by a factor of 5 compared to the same thickness of Fe film.