High Power Mid-Infrared Quantum Cascade Lasers Grown on Si
High Power Mid-Infrared Quantum Cascade Lasers Grown on Si
复制标题
在硅上生长的高功率中红外量子级联激光器
DOI：
10.3390/photonics9090626
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发表时间：
2022
期刊：
影响因子：
2.4
通讯作者：
M. Razeghi
中科院分区：
文献类型：
--
作者：
S. Slivken;N. Shrestha;M. Razeghi
本文详细介绍了应变平衡的InP基中红外量子级联激光器结构的演示，该结构直接生长在Si衬底上。这通过产生用于从Si的晶格常数（0.543 nm）转换为InP的晶格常数（0.587 nm）的变质缓冲层来促进。激光器的几何形状利用两个顶部接触，以便与未来的大规模集成兼容。与之前的报告不同，该器件能够在室温下工作，峰值功率高达1.6 W。在293 K时，器件的发射波长为4.82 μm，工作在基横模。
This article details the demonstration of a strain-balanced, InP-based mid-infrared quantum cascade laser structure that is grown directly on a Si substrate. This is facilitated by the creation of a metamorphic buffer layer that is used to convert from the lattice constant of Si (0.543 nm) to that of InP (0.587 nm). The laser geometry utilizes two top contacts in order to be compatible with future large-scale integration. Unlike previous reports, this device is capable of room temperature operation with up to 1.6 W of peak power. The emission wavelength at 293 K is 4.82 μm, and the device operates in the fundamental transverse mode.