Improving the Performance of Deep Recessed Anode AlGaN/GaN Schottky Barrier Diode by Post Etching Treatment
Improving the Performance of Deep Recessed Anode AlGaN/GaN Schottky Barrier Diode by Post Etching Treatment
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DOI：
10.1002/pssa.202000686
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发表时间：
2021-02
期刊：
影响因子：
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通讯作者：
Kai Liu;Chong Wang;Xuefeng Zheng;Xiao-hua Ma;Yaopeng Zhao;Ang Li;Yunlong He;Wei Mao;Y. Hao-Y.-H
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文献类型：
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作者：
Kai Liu;Chong Wang;Xuefeng Zheng;Xiao-hua Ma;Yaopeng Zhao;Ang Li;Yunlong He;Wei Mao;Y. Hao-Y.-H
本文采用氟（F）等离子体和HCl溶液处理作为蚀刻后处理，以提高凹进式阳极AlGaN/GaN肖特基势垒二极管（SBD）的性能。为了避免F等离子体处理导致正向特性恶化，设计了深凹阳极结构。仿真结果表明，当凹陷深度超过60 nm时，F等离子体处理后正向电流并未降低。实验中选择凹陷深度为70 nm。经过后蚀刻处理后，导通电阻（RON）和正向电压（VF）分别降低了0.4Ωmm和0.4V。正向特性的改善归因于电子传输路径的改变，这是由于F离子引起阳极侧壁势垒高度和宽度的增加。此外，反向电流（IREV）被抑制了两个数量级。这可以通过 F 等离子体处理产生的电场峰分散和 HCl 处理后蚀刻损伤的修复来解释。
Herein, fluorine (F) plasma and HCl solution treatments are used as post etching treatment to improve the performance of recessed anode AlGaN/GaN Schottky barrier diodes (SBDs). To avoid the deterioration in the forward characteristics caused by F‐plasma treatment, the deep recessed anode structure is designed. Simulation results show that when the recessed depth exceeds 60 nm, the forward current is not reduced after the F‐plasma treatment. The recessed depth of 70 nm is chosen in the experiment. After the post etching treatment, the on‐resistance (RON) and forward voltage (VF) are reduced by 0.4 Ω mm and 0.4 V, respectively. The improvement of forward characteristic is attributed to the change of electron transport paths, which is due to the increase in barrier height and width at anode sidewall caused by F ions. Moreover, the reverse current (IREV) is suppressed by two orders of magnitude. It can be explained by the dispersion of electric field peaks by F‐plasma treatment and repair of etching damage after HCl treatment.