Electron scattering study within the depletion region of the GaN(0001) and the GaAs(100) surface-猫眼课题宝

DOI：

10.1063/1.1785865

发表时间：

2004-08

期刊：

Applied Physics Letters

影响因子：

4

通讯作者：

中科院分区：

物理与天体物理2区

文献类型：

--

作者：

Zhi Liu;F. Machuca;P. Pianetta;W. Spicer;R. Pease

研究了GaN（0001）和GaAs（100）负电子亲和表面光电子的能量分布曲线（EDCs）。实验在室温下进行，分别用3.82eV激光激发氮化镓和1.96eV激光激发砷化镓。我们发现对总发射电流的主要贡献是在带弯曲区（BBR）中分别损失了平均能量310meV和140meV的电子。我们提出，当电子离开固体时能量损失的来源是由于BBR中的谷间声子散射（Γ电子散射到GaN的L - m谷和GaAs的L谷）。半导体NEA表面的EDC研究使我们能够研究半导体电子在高场区域的输运性质，这是由表面的带弯曲电压在内部建立的。研究了GaN（0001）和GaAs（100）负电子亲和表面光电子的能量分布曲线（EDCs）。实验在室温下进行，分别用3.82eV激光激发氮化镓和1.96eV激光激发砷化镓。我们发现对总发射电流的主要贡献是在带弯曲区（BBR）中分别损失了平均能量310meV和140meV的电子。我们提出，当电子离开固体时能量损失的来源是由于BBR中的谷间声子散射（Γ电子散射到GaN的L - m谷和GaAs的L谷）。半导体NEA表面的EDC研究使我们能够研究半导体电子在高场区域的输运性质，这是由表面的带弯曲电压在内部建立的。

The energy distribution curves (EDCs) of photoelectrons emitted from the GaN(0001) negative electron affinity (NEA) surfaces are investigated along with GaAs(100) NEA surfaces. These experiments are performed at room temperature using 3.82eV laser excitation for GaN and 1.96eV laser excitation for GaAs. We find the main contribution to the total emitted current is the electrons that have lost an average energy of 310meV and 140meV, respectively, in the bandbending region (BBR). We propose that the origin of the energy loss as the electrons exit the solid is due to intervalley phonon scattering in the BBR (scattering of Γ electrons into the L–M valleys for GaN and L valley for GaAs). EDC studies on semiconductor NEA surfaces enable us to investigate the semiconductor electron transport property in the high-field region, which is established internally by the bandbending voltage at the surface.The energy distribution curves (EDCs) of photoelectrons emitted from the GaN(0001) negative electron affinity (NEA) surfaces are investigated along with GaAs(100) NEA surfaces. These experiments are performed at room temperature using 3.82eV laser excitation for GaN and 1.96eV laser excitation for GaAs. We find the main contribution to the total emitted current is the electrons that have lost an average energy of 310meV and 140meV, respectively, in the bandbending region (BBR). We propose that the origin of the energy loss as the electrons exit the solid is due to intervalley phonon scattering in the BBR (scattering of Γ electrons into the L–M valleys for GaN and L valley for GaAs). EDC studies on semiconductor NEA surfaces enable us to investigate the semiconductor electron transport property in the high-field region, which is established internally by the bandbending voltage at the surface.