InAs/GaAs Core–Shell Nanowires
InAs/GaAs Core–Shell Nanowires
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DOI：
10.1021/cg200393y
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发表时间：
2011-08
影响因子：
3.8
通讯作者：
R. Popovitz‐Biro;A. Kretinin;P. V. Huth;H. Shtrikman
中科院分区：
文献类型：
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作者：
R. Popovitz‐Biro;A. Kretinin;P. V. Huth;H. Shtrikman
对金辅助气-液-固(VLS)生长InAs纳米线进行了优化，并用于生长具有纤锌矿结构的高度失配的InAs/GaAs核壳异质结构纳米线。其动机是双重的，一方面为电子器件和弹道运输应用提供了InAs纳米线(NW)表面钝化的手段，另一方面为研究核-壳、圆柱形结构中高度失配的系统的结构特性提供了手段。由边缘位错之间的平均间距、InAs和GaAs晶格重叠产生的莫尔条纹的周期性以及电子衍射图的分裂，推断了InAs芯和最松弛的GaAs壳之间的失配。在应变松弛过程中，形成了线状和环状边缘位错。实验测得的径向和轴向失配分别约为6±1%和4±0.5%。
Gold-assisted vapor–liquid–solid (VLS) growth of InAs nanowires was optimized and used for growth of highly mismatched InAs/GaAs core–shell heterostructure nanowires having the wurtzite structure. The motivation is 2-fold, providing means for surface passivation of InAs nanowires (NWs) for electronic devices and ballistic transport applications on one hand and for studying the structural properties of a highly mismatched system in a core–shell, cylindrical configuration on the other hand. The misfit between the InAs core and the mostly relaxed GaAs shell was deduced from the average spacing between the edge dislocations, the periodicity of the Moire fringes resulting from the overlap between the InAs and GaAs lattices and the splitting in the electron diffraction images. Both line and loop edge dislocations are formed in the strain relaxation process. The experimental radial and axial misfits were found to be approximately 6 ± 1% and 4 ± 0.5%, respectively.