NFET effective work function improvement via stress memorization technique in replacement metal gate technology
NFET effective work function improvement via stress memorization technique in replacement metal gate technology
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发表时间：
2013-06
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通讯作者：
Y. Liu;H. Meer;O. Gluschenkov;X. Yang;F. Sato;K. Cho;M. Ganz;H. Utomo;Y. Wang;U. Kwon-U.
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作者：
Y. Liu;H. Meer;O. Gluschenkov;X. Yang;F. Sato;K. Cho;M. Ganz;H. Utomo;Y. Wang;U. Kwon-U.
在本文中，我们首次研究并报告了先进替代金属栅（RMG）CMOS 技术中应力记忆技术（SMT）产生的有效功函数（eWF）调制。我们的 SMT 数据显示，除了典型的应变诱导迁移率增强之外，NFET 短沟道效应 (SCE) 也得到了显着改善，这表明 eWF 更好。进一步的研究证明，eWF 的改善是由于 SMT 的单轴沟道应变导致硅导带的电子亲和力增加。评估了电子亲和力变化对器件性能和可靠性的影响。
In this paper, for the first time we investigate and report the effective workfunction (eWF) modulation arising from stress memorization technique (SMT) in advanced replacement metal gate (RMG) CMOS technology. Our SMT data show a strong improvement in NFET short channel effect (SCE) besides a typical strain-induced mobility enhancement, suggesting better eWF. Further investigation proves that the eWF improvement is due to the electron affinity increase at silicon conduction band caused by the uniaxial channel strain from SMT. The impact of the electron affinity change on device performance and reliability has been evaluated.