Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface
Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface
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DOI：
10.1063/1.1691496
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发表时间：
2004-03
影响因子：
4
通讯作者：
Shijie Xu;Q. Li;J. Dong;S. Chua
中科院分区：
文献类型：
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作者：
Shijie Xu;Q. Li;J. Dong;S. Chua
在这封信中，我们报告的温度依赖的反斯托克斯光致发光（ASPL）在部分有序的GaInP 2外延层和GaAs衬底之间的界面。发现ASPL的强度强烈依赖于温度，并伴随着明显的能量蓝移。采用定域态发光模型定量解释了ASPL的温度依赖性。理论与实验结果吻合良好。讨论了上转换载流子的辐射复合机制。
In this letter, we report on temperature-dependent anti-Stokes photoluminescence (ASPL) at an interface between partially ordered GaInP2 epilayer and GaAs substrate. It is found that the intensity of the ASPL depends strongly on temperature accompanying with a clear blueshift in energy. A localized-state luminescence model was employed to quantitatively interpret temperature dependence of the ASPL. Excellent agreement between the theory and experiment was obtained. Radiative recombination mechanism of the up-converted carriers was discussed.