Effect of Post-annealing on the Electrochromic Properties of Layer-by-Layer Arrangement FTO-WO3-Ag-WO3-Ag
Effect of Post-annealing on the Electrochromic Properties of Layer-by-Layer Arrangement FTO-WO3-Ag-WO3-Ag
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DOI：
10.1007/s11664-018-6199-4
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发表时间：
2018-03
影响因子：
2.1
通讯作者：
S. Hoseinzadeh;R. Ghasemiasl;A. Bahari;A. H. Ramezani
中科院分区：
文献类型：
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作者：
S. Hoseinzadeh;R. Ghasemiasl;A. Bahari;A. H. Ramezani
在目前的研究中，三氧化钨(W03)和银(Ag)的复合材料以逐层电致变色(EC)的方式沉积在氟掺杂的氧化锡涂层玻璃基板上。纳米氧化钨是一种可作为阴极材料的n型半导体材料。纳米银是一种金属，可以作为电子陷阱中心，促进电荷偏离。该方法采用物理气相沉积的方法在玻璃基板上沉积WO_3和Ag纳米粉末。制备的电致变色器件(ECD)进行了后退火处理，以考察温度对其电致变色器件性能的影响。用扫描电子显微镜和原子力显微镜对薄膜的形貌进行了表征。结构分析表明，银掺杂的加入增加了薄膜的团聚尺寸。薄膜的平均粗糙度约为17.8 nm。用循环伏安法和紫外可见光谱研究了薄膜的电光性能，比较了不同的后退火温度对薄膜电光性能的影响。ECD测试表明，与其他薄膜相比，在200℃下热处理的薄膜具有更好的导电性(氧化态最大电流约为90 mA)和透过率变化(连续开关阶段的ΔT = 为90%)。薄膜的光学带隙表明，它允许在3.85 eV处直接跃迁。这些着色效率和响应时间的组合的电化学性质表明，WO_3-Ag-WO_3-Ag排列是用于这类ECD的一个很有前途的候选者。
In the current study, composites of tungsten trioxide (W03) and silver (Ag) are deposited in a layer-by-layer electrochromic (EC) arrangement onto a fluorine-doped tin oxide coated glass substrate. Tungsten oxide nanoparticles are ann-type semiconductor that can be used as EC cathode material. Nano-sized silver is a metal that can serve as an electron trap center that facilitates charge departure. In this method, the WO3and Ag nanoparticle powder were deposited by physical vapor deposition onto the glass substrate. The fabricated electrochromic devices (ECD) were post-annealed to examine the effect of temperature on their EC properties. The morphology of the thin film was characterized by scanning electron microscopy and atomic force microscopy. Structural analysis showed that the addition of silver dopant increased the size of the aggregation of the film. The film had an average approximate roughness of about 17.8 nm. The electro-optical properties of the thin film were investigated using cyclic voltammetry and UV–visible spectroscopy to compare the effects of different post-annealing temperatures. The ECD showed that annealing at 200°C provided better conductivity (maximum current of about 90 mA in the oxidation state) and change of transmittance (ΔT = 90% at the continuous switching step) than did the other thin films. The optical band gaps of the thin film showed that it allowed direct transition at 3.85 eV. The EC properties of these combinations of coloration efficiency and response time indicate that the WO3-Ag-WO3-Ag arrangement is a promising candidate for use in such ECDs.