Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study
Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study
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DOI：
10.1109/ted.2011.2149531
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发表时间：
2011-05
影响因子：
3.1
通讯作者：
Xingsheng Wang;A. Brown;N. Idris;S. Markov;G. Roy;A. Asenov
中科院分区：
文献类型：
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作者：
Xingsheng Wang;A. Brown;N. Idris;S. Markov;G. Roy;A. Asenov
本文针对栅极长度为 35、25、18 和 13 nm 的大容量高 k/金属栅极 (HKMG) MOSFET 的统计阈值电压变化进行了全面的全尺寸三维模拟缩放研究。金属栅极粒度 (MGG) 和相应的功函数引起的阈值电压变异性已成为散装 HKMG MOSFET 统计变异性的重要来源。研究发现，在存在主要变异源（MGG、随机离散掺杂剂和线边缘粗糙度）的情况下，覆盖栅极的金属晶粒的数量在确定缩放器件中阈值电压分布的形状和阈值电压变异性的大小方面起着重要作用。研究发现金属颗粒的放置也会影响总 MGG 的变异性。本文介绍了 MGG 与其他统计变异源相比的相对重要性。研究发现，当金属晶粒尺寸无法充分控制时，MGG 会扭曲甚至主导阈值电压统计分布。
This paper presents a comprehensive full-scale three-dimensional simulation scaling study of the statistical threshold-voltage variability in bulk high-k/metal gate (HKMG) MOSFETs with gate lengths of 35, 25, 18, and 13 nm. Metal gate granularity (MGG) and corresponding workfunction-induced threshold-voltage variability have become important sources of statistical variability in bulk HKMG MOSFETs. It is found that the number of metal grains covering the gate plays an important role in determining the shape of the threshold-voltage distribution and the magnitude of the threshold-voltage variability in scaled devices in the presence of dominant variability sources (MGG, random discrete dopants, and line edge roughness). The placement of metal grains is found to also contribute to the total MGG variability. This paper presents the relative importance of MGG compared with other statistical variability sources. It is found that MGG can distort and even dominate the threshold-voltage statistical distribution when the metal grain size cannot be adequately controlled.