Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si
Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si
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DOI：
10.1143/apex.4.104102
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发表时间：
2011-09
影响因子：
2.3
通讯作者：
Hong Zhou;G. Ng;Zhi Hong Liu;S. Arulkumaran
中科院分区：
文献类型：
--
作者：
Hong Zhou;G. Ng;Zhi Hong Liu;S. Arulkumaran
本文报道了在高阻硅衬底上原子层淀积的Al_2O_3/AlGaN/GaN金属绝缘体-半导体高电子迁移率晶体管直流性能的影响。随着退火温度的增加，器件的最大跨导和栅漏击穿电压增大。阈值电压正移，栅正向电流变化不大。退火后Al_2O_3层质量的改善被认为是由于深能级陷阱或界面态的减少。
In this paper, the influence of post-oxide annealing on the DC performance of the atomic-layer-deposited Al2O3/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor on a high-resistivity silicon substrate is reported. With annealing, the maximum transconductance and gate–drain breakdown voltage of the device increased. The threshold voltage positively shifted, and the gate forward current did not change much. The improved quality of the Al2O3 layer after annealing is believed to due to the reduction of the deep level traps or interface states.