In Situ Interferometry for ppm-Order Solubility Analysis at High Temperatures: A Case Study of Carbon Solubility in Molten Silicon
In Situ Interferometry for ppm-Order Solubility Analysis at High Temperatures: A Case Study of Carbon Solubility in Molten Silicon
复制标题
用于高温下 ppm 级溶解度分析的原位干涉测量:熔融硅中碳溶解度的案例研究
DOI:
10.1007/s11663-021-02216-4
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发表时间:
2021
期刊:
影响因子:
--
通讯作者:
Didier Chaussende and Hiroyuki Shibata
中科院分区:
文献类型:
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作者:
Sakiko Kawanishi;Takeshi Yoshikawa;Didier Chaussende and Hiroyuki Shibata
The precise solubility data of a component in high-temperature melts are essential for the design and optimization of various processes including pyrometallurgical and solution growth processes. In this study, we developed anin situmethod for measuring the solubility of a component in molten metals and alloys and investigated C solubility in molten Si using a system comprising Si and SiC substrate. The three-dimensional interfacial shape between the SiC substrate and molten Si droplet was analyzed from images captured by interferometry utilizing the internal interference in the SiC substrate. From the changes in interfacial shape, the temperature dependence of C solubility in molten Si up to 1873 K was successfully evaluated in the single experiment. The obtained C solubilities were in accordance with the smallest solubilities ever reported, suggesting a reliable evaluation because overestimations sometimes happen in the conventional point-by-point measurements of quenching samples. In addition, the excess partial molar Gibbs energy of C in molten Si was evaluated thermodynamically. The proposed method enables thein situand crucible-free quantitative analysis of the solubility of a component in molten metals and alloys in the order of a few tens to hundreds of ppm for various material systems at high temperatures.