Generative design of stable semiconductor materials using deep learning and density functional theory
Generative design of stable semiconductor materials using deep learning and density functional theory
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DOI:
10.1038/s41524-022-00850-3
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发表时间:
2022-08
影响因子:
9.7
通讯作者:
E. M. Siriwardane;Yong Zhao;Indika Perera;Jianjun Hu
中科院分区:
文献类型:
--
作者:
E. M. Siriwardane;Yong Zhao;Indika Perera;Jianjun Hu
Semiconductor device technology has greatly developed in complexity since discovering the bipolar transistor. In this work, we developed a computational pipeline to discover stable semiconductors by combining generative adversarial networks (GAN), classifiers, and high-throughput first-principles calculations. We used CubicGAN, a GAN-based algorithm for generating cubic materials and developed a classifier to screen the semiconductors and studied their stability using first principles. We found 12 stable AAMH6semiconductors in the F-43m space group including BaNaRhH6, BaSrZnH6, BaCsAlH6, SrTlIrH6, KNaNiH6, NaYRuH6, CsKSiH6, CaScMnH6, YZnMnH6, NaZrMnH6, AgZrMnH6, and ScZnMnH6. Previous research reported that five AAIrH6 semiconductors with the same space group were synthesized. Our research shows that AAMnH6and NaYRuH6semiconductors have considerably different properties compared to the rest of the AAMH6semiconductors. Based on the accurate hybrid functional calculations, AAMH6semiconductors are found to be wide-bandgap semiconductors. Moreover, BaSrZnH6and KNaNiH6are direct-bandgap semiconductors, whereas others exhibit indirect bandgaps.