Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle
Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle
复制标题
通过层间扭转角调节MoS2/石墨烯异质结构的PL和电子结构
DOI：
10.1063/1.5011120
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发表时间：
2017-12-25
影响因子：
4
通讯作者：
Zhang, Guangyu
中科院分区：
文献类型：
--
作者：
Du, Luojun;Yu, Hua;Zhang, Guangyu
将二维材料堆叠成具有不同层间扭角的范德华异质结构，为电子结构和物理性能工程开辟了新的策略。在这里，我们研究了层间扭曲角度如何影响MoS2/石墨烯异质结构的光致发光（PL）和拉曼光谱。基于一系列具有不同层间扭角的异质结构样品，我们发现这些异质结构中单层二硫化钼的PL和拉曼光谱与扭角有很强的相关性。当层间扭转角度从0°增加到30°时，发光强度和发射能量均增加，而E2g拉曼模式的分裂逐渐减小。观察到的现象归因于二硫化钼和石墨烯之间的扭曲角依赖层间相互作用和取向错误引起的晶格应变。
Stacking two-dimensional materials into van der Waals heterostructures with distinct interlayer twisting angles opens up new strategies for electronic structure and physical property engineering. Here, we investigate how the interlayer twisting angles affect the photoluminescence (PL) and Raman spectra of the MoS2/graphene heterostructures. Based on a series of heterostructure samples with different interlayer twisting angles, we found that the PL and Raman spectra of the monolayer MoS2 in these heterostructures are strongly twisting angle dependent. When the interlayer twisting angle evolves from 0° to 30°, both the PL intensity and emission energy increase, while the splitting of the E2g Raman mode decreases gradually. The observed phenomena are attributed to the twisting angle dependent interlayer interaction and misorientation-induced lattice strain between MoS2 and graphene.