Design and Construction of a Direct-Plotting Capacitance Inverse-Doping Profiler for Semiconductor Evaluation
Design and Construction of a Direct-Plotting Capacitance Inverse-Doping Profiler for Semiconductor Evaluation
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用于半导体评估的直接绘图电容反掺杂分析仪的设计和构建
DOI：
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发表时间：
1969
期刊：
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通讯作者：
R. Spiwak
中科院分区：
文献类型：
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作者：
R. Spiwak
本文提出了一种利用谐波产生法测量半导体外延片表面垂直掺杂分布的新技术。该方法已用于直接绘图反掺杂剖面仪的研制，其掺杂浓度测定的绝对精度约为10%，相对精度为几个百分点。深度分辨率是德拜长度的数量级。剖面仪的优点是以低成本提供即时结果和准确性。
A new technique involving harmonic generation in measuring the doping profile normal to the surface of semiconductor epitaxial wafers has been developed. This method has been used in the construction of a direct-plotting inverse-doping profiler which can determine the doping concentration with an absolute accuracy of about 10 percent and a relative accuracy of a few percent. The depth resolution is on the order of a Debye length. The profiler has the advantages of providing immediate results and accuracy at low cost.