An isotropic three-dimensional organic semiconductor 2-(thiopyran-4-ylidene)-1,3-benzodithiole (TP-BT): asymmetric molecular design to suppress access resistance
An isotropic three-dimensional organic semiconductor 2-(thiopyran-4-ylidene)-1,3-benzodithiole (TP-BT): asymmetric molecular design to suppress access resistance
复制标题
各向同性三维有机半导体2-(噻喃-4-亚基)-1,3-苯并二硫醇(TP-BT)：抑制存取电阻的不对称分子设计
DOI：
10.1039/d2ce00644h
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发表时间：
2022
期刊：
影响因子：
3.1
通讯作者：
Yamada Jun-ichi
中科院分区：
文献类型：
--
作者：
Nishimoto Hiroshi;Kadoya Tomofumi;Miyake Rikyu;Oda Takeshi;Nishida Jun-ichi;Kubo Kazuya;Tajima Hiroyuki;Kawase Takeshi;Yamada Jun-ichi
在本研究中，我们合成了两种新型的p型有机半导体，其中硫属元素原子沿着分子的长轴引入：2-（吡喃-4-亚基）-1，3-苯并二硫杂环戊烯（P-BT）和2-（噻喃-4-亚基）-1，3-苯并二硫杂环戊烯（TP-BT）。P-BT形成传统的二维（2D）人字形排列，而TP-BT形成类似的人字形排列，但还包括人字形层之间的重叠积分，实现各向同性三维（3D）分子间相互作用。我们已经制作了底栅/顶接触有机薄膜晶体管（OTFT）使用这些材料作为有源层，并研究了其迁移率的膜厚依赖性。结果表明，随着有源层厚度的增加，2D P-BT的迁移率降低。相反，3D TP-BT的迁移率不随着膜厚度增加而改变，并且相应的OTFT具有小的膜厚度依赖性。通过传输线方法估计的接触电阻的厚度依赖性的进一步结果表明，TP-BT由于其3D电子结构可以显着抑制接入电阻。
In this study, we have synthesised two novel p-type organic semiconductors in which chalcogen atoms are introduced along the long axis of molecules: 2-(pyran-4-ylidene)-1,3-benzodithiole (P-BT) and 2-(thiopyran-4-ylidene)-1,3-benzodithiole (TP-BT). P-BT forms a conventional two-dimensional (2D) herringbone arrangement, while TP-BT forms a similar herringbone arrangement, but also includes overlap integrals between the herringbone layers, realising isotropic three-dimensional (3D) intermolecular interactions. We have fabricated bottom-gate/top-contact organic thin-film transistors (OTFTs) using these materials as the active layers and have investigated the film thickness dependence of their mobility. The results demonstrate that the mobility of 2D P-BT decreases as the thickness of the active layer increases. In contrast, the mobility of the 3D TP-BT does not change as the film thickness increases, and the corresponding OTFTs have little film thickness dependence. Further results regarding the thickness dependence of the contact resistance estimated by the transfer line method indicate that TP-BT can significantly suppress access resistance due to its 3D electronic structure.