ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers
ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers
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使用 ZnS 缓冲层通过分子束外延在 GaP 衬底上相干生长 ZnSTe
DOI：
10.1002/pssb.201600009
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and Tomoki Abe
中科院分区：
文献类型：
--
作者：
Kunio Ichino;Shota Kashiyama;Nao Nanba;Hiroyasu Hasegawa;and Tomoki Abe
ZnSTe 外延层与 GaP 衬底几乎晶格匹配，已通过分子束外延生长。层直接生长到基板上会导致晶体质量较差，没有显示出连贯生长的迹象。这似乎是由于生长初始阶段的合金成分偏差造成的。为了避免这个问题，在 ZnSTe/GaP 界面处插入了一层薄薄的相干 ZnS 缓冲层。通过缓冲层，实现了ZnSTe层的共格生长，提高了晶体质量。
ZnSTe epitaxial layers with , nearly lattice‐matched to GaP substrates, have been grown by molecular beam epitaxy. Direct growth of the layers onto the substrates results in poor crystal quality, showing no sign of coherent growth. This seems to be due to alloy composition deviation at the initial stage of the growth. To avoid the problem, a thin coherent ZnS buffer layer has been inserted at the ZnSTe/GaP interface. With the buffer layers, coherent growth of ZnSTe layers is achieved and the crystal quality has been improved.