Strong energy dependence of the electron-phonon coupling strength on Bi(100).
Strong energy dependence of the electron-phonon coupling strength on Bi(100).
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电子-声子耦合强度对 Bi(100) 具有很强的能量依赖性。
DOI：
10.1103/physrevlett.91.127601
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发表时间：
2003
影响因子：
8.6
通讯作者：
P. Hofmann
中科院分区：
文献类型：
--
作者：
J. E. Gayone;S. Hoffmann;Z. Li;P. Hofmann
我们研究了Bi（100）的电子-声子耦合强度与能量的关系。温度依赖的表面态线宽的拟合导致耦合参数λ从0.20+/-0.02至0.72+/-0.05的变化，因为表面态的结合能从70增加到330 meV。这一结果不能与通常的解释，在费米能量的电子-声子质量增强参数的λ。我们认为，这一行为主要是由该区域的体态密度的强能量依赖性引起的。
We have studied the energy dependence of the electron-phonon coupling strength on Bi(100). A fit of the temperature-dependent surface state linewidth results in a change of the coupling parameter lambda from 0.20+/-0.02 to 0.72+/-0.05 as the binding energy of the surface state increases from 70 to 330 meV. This result cannot be reconciled with the usual interpretation of lambda as the electron-phonon mass enhancement parameter at the Fermi energy. We suggest that this behavior is mainly caused by the strong energy dependence of the bulk density of states in this region.