Direct probing of the stacking order and electronic spectrum of rhombohedral trilayer graphene with scanning tunneling microscopy

Direct probing of the stacking order and electronic spectrum of rhombohedral trilayer graphene with scanning tunneling microscopy
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DOI:
10.1103/physrevb.91.035410
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发表时间:
2014-09
期刊:
影响因子:
3.7
通讯作者:
Rui Xu;Long-Jing Yin;Jiabin Qiao;Ke-ke Bai;J. Nie;Lin He
Rui Xu;Long-Jing Yin;Jiabin Qiao;Ke-ke Bai;J. Nie;Lin He
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Rui Xu;Long-Jing Yin;Jiabin Qiao;Ke-ke Bai;J. Nie;Lin He

文献摘要

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Recently, the rhombohedral trilayer graphene (r-TLG) has attracted much attention because of its low-energy flat bands, which are predicted to result in many strongly correlated phenomena. Here, we demonstrate that it is possible to probe the stacking order and electronic spectrum of the r-TLG directly with a scanning tunneling microscopy around a monoatomic step edge of the top graphene layer. The tunneling spectra of the r-TLG exhibit four adjacent peaks, which are generated by the low-energy flat bands, flanking the charge neutrality point. Based on these spectra, the true energy gap and the energy gap at the K-point of the r-TLG are determined as about 9 meV and 23 meV, respectively. The observed features are well reproduced by a low-energy effective Hamiltonian.