Construction of ZnO/ZnS/CdS/CuInS2 Core-Shell Nanowire Arrays via Ion Exchange: p-n Junction Photoanode with Enhanced Photoelectrochemical Activity under Visible Light
Construction of ZnO/ZnS/CdS/CuInS2 Core-Shell Nanowire Arrays via Ion Exchange: p-n Junction Photoanode with Enhanced Photoelectrochemical Activity under Visible Light
复制标题
通过离子交换构建 ZnO/ZnS/CdS/CuInS2 核壳纳米线阵列：可见光下增强光电化学活性的 p-n 结光电阳极
DOI：
10.1021/am501336u
复制
发表时间：
2014-06-11
影响因子：
9.5
通讯作者：
Zhang, Wei-De
中科院分区：
文献类型：
--
作者：
Yu, Yu-Xiang;Ouyang, Wei-Xin;Zhang, Wei-De
采用离子交换和水热法制备了可见光下光电活性增强的ZnO/ZnS/CdS/CuInS2核壳纳米线阵列。采用x射线衍射、扫描电镜、透射电镜、紫外可见吸收、x射线光导光谱、光电化学响应等方法对样品进行表征。作为p-n结光阳极，ZnO/ZnS/CdS/CuInS2异质结构对水分解的可见光催化活性明显高于ZnO/ZnS/CdS和ZnO/ZnS薄膜。具有最佳结构的ZnO/ZnS/CdS/CuInS2薄膜在480 nm处的光电流最高为10.5 mA/cm(2)， IPCE最高约为57.7%，对Ag/AgCl的偏置电位为0 V。研究了CdS和ZnS在ZnO/ZnS/CdS/CuInS2异质结构中的关键作用。ZnS作为钝化层抑制了氧化物与CuInS2界面处光生载流子的复合。CdS增强了对可见光的吸收，并与CuInS2形成p-n结，促进了载流子的输运，延缓了CuInS2中电子与空穴的复合，从而提高了ZnO/ZnS/CdS/CuInS2异质结构的光电性能。
ZnO/ZnS/CdS/CuInS2 core-shell nanowire arrays with enhanced photoelectrochemical activity under visible light were successfully prepared via ion exchange and hydrothermal methods. The samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, UV-vis absorption, X-ray photoemission spectroscopy, and photoelectrochemical response. As a p-n junction photoanode, ZnO/ZnS/CdS/CuInS2 heterostructure shows much higher visible light photoelectrocatalytic activity toward water splitting than ZnO/ZnS/CdS and ZnO/ZnS films. The ZnO/ZnS/CdS/CuInS2 film with optimal constitution exhibits the highest photocurrent of 10.5 mA/cm(2) and the highest IPCE of approximately 57.7% at 480 nm and a bias potential of 0 V versus Ag/AgCl. The critical roles of CdS and ZnS in ZnO/ZnS/CdS/CuInS2 heterostructure were investigated. ZnS, as a passivation layer, suppresses the recombination of the photogenerated charge carriers at the interface of the oxide and CuInS2. CdS enhances the absorption of visible light and forms p-n junctions with CuInS2, which promotes the transport of charge carriers and retards the recombination of electrons and holes in CuInS2 to improve the photoelectrochemical performance of ZnO/ZnS/CdS/CuInS2 heterostructure.