Photoinduced p-Type Conductivity in n-Type ZnO
Photoinduced p-Type Conductivity in n-Type ZnO
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DOI：
10.1007/s11664-014-3608-1
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发表时间：
2015-01
影响因子：
2.1
通讯作者：
W. X. Zhao;B. Sun;Z. Shen;Y. Liu;P. Chen
中科院分区：
文献类型：
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作者：
W. X. Zhao;B. Sun;Z. Shen;Y. Liu;P. Chen
采用磁控溅射法在ANN型硅(100)单晶衬底上制备了Ag/[BaTiO_3/γ-Fe_2O_3]/氧化锌复合薄膜，并对其进行了不同温度的热处理。电容-电压(C-V)曲线表明，随着退火温度的升高，电容逐渐增大。此外，在白炽灯照射下，氧化锌在暗对接电导中表现出n型电导。N型氧化锌的光致p型电导应与高温退火形成的一种特殊的n型氧化锌层有关。[BaTiO_3/γ-Fe_2O_3]/氧化锌薄膜的电流-电压(I-V)曲线显示出很强的光导效应。
Ag/[BaTiO3/γ-Fe2O3]/ZnO composite films were grown on ann-type silicon (100) single-crystal substrate by magnetron sputtering, and annealed at various temperatures. Capacitance–voltage (C–V) curves show that the capacitance gradually increases with increasing annealed temperature. In addition, ZnO exhibitsn-type conductivity in the dark butp-type conductivity under incandescent lamp illumination. The photoinducedp-type conductivity inn-type ZnO should be related to a specialn-type ZnO layer originating from high-temperature annealing. The current–voltage (I–V) curves of the [BaTiO3/γ-Fe2O3]/ZnO thin films display a strong photoconductivity effect.