Influence of chromium concentration on the optical–electronic properties of ruby microstructures
Influence of chromium concentration on the optical–electronic properties of ruby microstructures
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DOI:
10.1088/0022-3727/43/1/015302
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发表时间:
2010-01
期刊:
影响因子:
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通讯作者:
L. C. Cossolino;A. Zanatta
中科院分区:
文献类型:
--
作者:
L. C. Cossolino;A. Zanatta
Films of amorphous aluminium nitride (AlN) were prepared by conventional radio frequency sputtering of an Al + Cr target in a plasma of pure nitrogen. The Cr-to-Al relative area determines the Cr content, which remained in the ∼0–3.5 at% concentration range in this study. Film deposition was followed by thermal annealing of the samples up to 1050 °C in an atmosphere of oxygen and by spectroscopic characterization through energy dispersive x-ray spectrometry, photoluminescence and optical transmission measurements. According to the experimental results, the optical–electronic properties of the Cr-containing AlN films are highly influenced by both the Cr concentration and the temperature of the thermal treatments. In fact, thermal annealing at 1050 °C induces the development of structures that, because of their typical size and distinctive spectral characteristics, were designated by ruby microstructures (RbMSs). These RbMSs are surrounded by a N-rich environment in which Cr3+ ions exhibit luminescent features not present in other Cr3+-containing systems such as ruby, emerald or alexandrite. The light emissions shown by the RbMSs and surroundings were investigated according to the Cr concentration and temperature of measurement, allowing the identification of several Cr3+-related luminescent lines. The main characteristics of these luminescent lines and corresponding excitation–recombination processes are presented and discussed in view of a detailed spectroscopic analysis.