Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors
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DOI：
10.1109/led.2011.2135835
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发表时间：
2011-05
影响因子：
4.9
通讯作者：
S. Poli;S. Reggiani;M. Denison;E. Gnani;A. Gnudi;G. Baccarani;S. Pendharkar;R. Wise
中科院分区：
文献类型：
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作者：
S. Poli;S. Reggiani;M. Denison;E. Gnani;A. Gnudi;G. Baccarani;S. Pendharkar;R. Wise
在高电流电压条件下，实验观察到n沟横向DMOS晶体管的阈值电压漂移（ΔVt）较大.该效应通过栅极电压以及环境温度（TA）来增强。采用幂律关系（ΔVt = Atn）对曲线进行近似，发现两种不同的贡献，并发现指数n明显增大，数值分析表明，垂直于氧化层界面的电场（En）和MOS沟道源极侧的内部温度（T）是造成这种增强退化的主要原因.
Large threshold voltage shifts (ΔVt) are experimentally observed in n-channel lateral DMOS transistors under high current-voltage regime. The effect is enhanced by the gate voltage as well as by the ambient temperature (TA) . By approximating the curves with the usually adopted power-law dependence (ΔVt = Atn), two different contributions are observed, and a clear increase of the exponent n is found. A numerical investigation is carried out, revealing that the electric field normal to the oxide interface (En) as well as the internal temperature (T) close to the source side of the MOS channel is mainly responsible for such enhanced degradation.