Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
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DOI：
10.7567/apex.8.085501
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发表时间：
2015-07
影响因子：
2.3
通讯作者：
D. Katzer;N. Nepal;D. Meyer;B. Downey;V. D. Wheeler;D. Storm;M. Hardy
中科院分区：
文献类型：
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作者：
D. Katzer;N. Nepal;D. Meyer;B. Downey;V. D. Wheeler;D. Storm;M. Hardy
射频等离子体分子束外延（RF - plasma MBE）被用于在六方碳化硅衬底上外延生长4到100纳米厚的金属β - Nb₂N薄膜。当氮/铌通量比大于1时，高质量β - Nb₂N的最关键参数是衬底温度。对在775到850℃之间生长的薄膜进行的X射线表征证明了β - Nb₂N相的形成。对在850℃下生长的β - Nb₂N薄膜进行的（0002）和X射线衍射测量显示，其与6H - SiC衬底存在0.68%的晶格失配。这表明β - Nb₂N可用于目前无法制造的高质量金属/半导体异质结构。
RF-plasma MBE was used to epitaxially grow 4- to 100-nm-thick metallic β-Nb2N thin films on hexagonal SiC substrates. When the N/Nb flux ratios are greater than one, the most critical parameter for high-quality β-Nb2N is the substrate temperature. The X-ray characterization of films grown between 775 and 850 °C demonstrates β-Nb2N phase formation. The (0002) and X-ray diffraction measurements of a β-Nb2N film grown at 850 °C reveal a 0.68% lattice mismatch to the 6H-SiC substrate. This suggests that β-Nb2N can be used for high-quality metal/semiconductor heterostructures that cannot be fabricated at present.