Anisotropic pyrochemical microetching of poly(tetrafluoroethylene) initiated by synchrotron radiation-induced scission of molecule bonds
Anisotropic pyrochemical microetching of poly(tetrafluoroethylene) initiated by synchrotron radiation-induced scission of molecule bonds
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DOI：
10.1063/1.4941668
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发表时间：
2016-02-01
影响因子：
4
通讯作者：
Utsumi, Yuichi
中科院分区：
文献类型：
--
作者：
Yamaguchi, Akinobu;Kido, Hideki;Utsumi, Yuichi
提出了一种聚四氟乙烯（PTFE）微加工工艺：同步辐射X射线诱导各向异性热化学微刻蚀。在室温下进行X射线照射。在加热时，经照射的PTFE基板表现出高精度的功能。随着辐照剂量的增加，衬底辐照区的X射线衍射峰和拉曼信号均降低。其腐蚀机理推测为：X射线辐照引起链断裂，从而降低了聚合物的数均聚合度。辐照PTFE的熔融温度随着聚合物链长的减小而降低，使得处理区域能够在较低温度下熔融。各向异性热化学蚀刻工艺使PTFE微结构的制造具有比同时加热和照射样品更高的精度。(C)2016 AIP Publishing LLC.
We developed a process for micromachining polytetrafluoroethylene (PTFE): anisotropic pyrochemical microetching induced by synchrotron X-ray irradiation. X-ray irradiation was performed at room temperature. Upon heating, the irradiated PTFE substrates exhibited high-precision features. Both the X-ray diffraction peak and Raman signal from the irradiated areas of the substrate decreased with increasing irradiation dose. The etching mechanism is speculated as follows: X-ray irradiation caused chain scission, which decreased the number-average degree of polymerization. The melting temperature of irradiated PTFE decreased as the polymer chain length decreased, enabling the treated regions to melt at a lower temperature. The anisotropic pyrochemical etching process enabled the fabrication of PTFE microstructures with higher precision than simultaneously heating and irradiating the sample. (C) 2016 AIP Publishing LLC.