Effect of delocalization of the donor states on the donor–acceptor recombination in zinc selenide

Effect of delocalization of the donor states on the donor–acceptor recombination in zinc selenide
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硒化锌中供体态离域对供体-受体重组的影响

DOI:
10.1016/s0022-2313(99)00023-x
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发表时间:
1999
影响因子:
3.6
通讯作者:
A. Gurskii
A. Gurskii
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
A. Gurskii

文献摘要

被引文献

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考虑了ZnSe中供体浓度增加时供体态离域的影响。这一效应导致重组机制由供体-受体对重组转变为供体带与局部受体态之间的重组,而非隧穿。据估计,对于ED=30meV的浅层供体和ED=44和55meV的深层供体,离域临界供体浓度分别为Ncr≈5×1016cm−3和Ncr≈2×1017and 5×1017cm−3。将所提出的复合模型与实验结果进行比较,可以毫无矛盾地定性地解释中掺杂补偿ZnSe:N样品中近带边缘杂质复合带的观测行为。
The effect of delocalization of donor states with increased donor concentration in ZnSe was considered. This effect leads to the change of recombination mechanism from donor–acceptor pair recombination to the recombination between the donor band and localized acceptor states without tunneling. The critical donor concentration for delocalization has been estimated to be Ncr≈5×1016cm−3for shallow donors with ED=30meV and Ncr≈2×1017and 5×1017cm−3for deeper donors with ED=44 and 55meV, respectively. The comparison of the proposed recombination model with experimental results allows one to explain qualitatively without contradiction, the observed behaviour of the near-band edge impurity recombination bands in intermediately doped compensated ZnSe:N samples.