Characteristics of Pt/PbZr0.52Ti0.48O3/Pt and Au/PbZr0.52Ti0.48O3/YBa2Cu3O7−δ capacitors after γ-ray irradiation
Characteristics of Pt/PbZr0.52Ti0.48O3/Pt and Au/PbZr0.52Ti0.48O3/YBa2Cu3O7−δ capacitors after γ-ray irradiation
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DOI：
10.1051/epjap:1999235
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发表时间：
1999-09
影响因子：
1
通讯作者：
Jianxia Gao;Lirong Zheng;Zhitang Song;Chenglu Lin;De-zhang Zhu
中科院分区：
文献类型：
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作者：
Jianxia Gao;Lirong Zheng;Zhitang Song;Chenglu Lin;De-zhang Zhu
采用脉冲激光沉积（PLD）法制备了PbZr0.52Ti0.48O3 （PZT）和YBa2Cu3O7-delta （YBCO）薄膜。在硅衬底上制备Pt/PZT/Pt铁电电容器，在LaAlO3衬底上制备Au/PZT/YBCO铁电电容器。测量了辐照前后电容器的电容电压特性和磁滞回线。结果表明：随着累积剂量的增加，Pt/PZT/Pt电容器的剩余极化P-r和绝对矫顽力场E-C增大，介电常数epsilon减小；对于Au/PZT/YBCO电容器，P-r和epsilon随累积剂量的增加而减小，但负矫顽场和正矫顽场的绝对值增大。结果可以用铁电材料缺陷处辐射诱导的正电荷捕获来解释。
PbZr0.52Ti0.48O3 (PZT) and YBa2Cu3O7-delta (YBCO) thin films were fabricated by a pulsed laser deposition (PLD) method. The Pt/PZT/Pt ferroelectric capacitors were fabricated on silicon substrates while the Au/PZT/YBCO capacitors were fabricated on LaAlO3 substrates. The capacitance-voltage (C-V) properties and the hysteresis loops of the capacitors were measured before and after gamma-ray irradiation. The results show that for Pt/PZT/Pt capacitors, the remanent polarization P-r and the absolute coercive field E-C increase while the dielectric constant epsilon decrease with increasing accumulated dose. For the Au/PZT/YBCO capacitors, P-r and epsilon decreased with accumulated dose, but the absolute value of the negative and positive coercive fields increased. The results have been interpreted by radiation-induced positive charge trapping at defects in the ferroelectric materials.