Fundamental characteristics of built‐in high‐frequency coil‐type sputtering apparatus
Fundamental characteristics of built‐in high‐frequency coil‐type sputtering apparatus
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内置高频线圈式溅射装置的基本特性
DOI：
10.1116/1.575744
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
M. Yamashita
中科院分区：
文献类型：
--
作者：
M. Yamashita
在实验的基础上制作了设计用于离子系膜形成的高速溅射装置。通过L耦合高频放电，在直流二极管溅射设备的靶和衬底之间产生了1012 cm−3量级的稠密等离子体。当使用Cu靶时，提取离子束的质谱中的Cu+离子电流随着Ar气体压力而增加，并且在1.1 ×10 - 1 Torr（1.3×101 Pa）的压力下具有约为Ar+离子电流的10倍的最大值。当高频线圈的偏置电阻从10 kΩ变为0时，等离子体电位在+20 V至+200 V之间连续变化。等离子体电位的变化使离子轰击在基片上的能量发生很大变化。所形成的膜的精细结构的放电气体压力和/或等离子体电位的显着影响。甚至铁磁材料也可以高速溅射。
A high‐rate sputtering apparatus designed for ion‐based film formation was made on an experimental basis. A dense plasma of the order of 1012 cm−3 was generated between the target and the substrate of a dc diode sputtering apparatus by means of an L‐coupled high‐frequency discharge. When a Cu target was used, the Cu+ ion current in the mass spectrum of the extracted ion beam increased with the Ar gas pressure, and had a maximum value about ten times that of an Ar+ ion current, at a pressure of ∼1×10−1 Torr (1.3×101 Pa). The plasma potential varied continuously from +20 to +200 V when the bias resistance for the high‐frequency coil was changed from 10 kΩ to 0. The energy of the ions impinging on the substrate was changed greatly by the change in the plasma potential. The fine structure of the film formed was markedly influenced by the discharge gas pressure and/or the plasma potential. Even ferromagnetic material could be sputtered at a high rate.