On the polarized emission from exciton complexes in GaN quantum dots
On the polarized emission from exciton complexes in GaN quantum dots
复制标题
GaN量子点中激子复合物的偏振发射
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
P. Holtz
中科院分区：
文献类型：
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作者：
S. Amloy;K. Karlsson;T. Andersson;P. Holtz
本文从理论和实验上研究了非对称生长的GaN量子点中激子复合物的线偏振特性。结果表明，偏振角和偏振度可以方便地用来关联发射线在记录的光致发光光谱的特定点。实验结果与组态相互作用的计算，预测类似的极化度的激子和双激子（在10%以内）在典型的GaN量子点。该理论进一步预测，极化度可以提供关于点的电荷状态的信息。
The optical linear polarization properties of exciton complexes in asymmetric Stranski-Krastanov grown GaN quantum dots have been investigated experimentally and theoretically. It is demonstrated that the polarization angle and the polarization degree can be conveniently employed to associate emission lines in the recorded photoluminescence spectra to a specific dot. The experimental results are in agreement with configuration interaction computations, which predict similar polarization degrees for the exciton and the biexciton (within 10%) in typical GaN quantum dots. The theory further predicts that the polarization degree can provide information about the charge state of the dot.