Acceleration of Deposition Rates in a Chemical Vapor Deposition Process by Laser Irradiation
Acceleration of Deposition Rates in a Chemical Vapor Deposition Process by Laser Irradiation
复制标题
DOI：
10.1143/jjap.42.l316
复制
发表时间：
2003-03
影响因子：
1.5
通讯作者：
Hidetoshi Miyazaki;Teiichi Kimura;T. Goto
中科院分区：
文献类型：
--
作者：
Hidetoshi Miyazaki;Teiichi Kimura;T. Goto
采用激光化学气相沉积(CVD)工艺制备了氧化钇稳定的氧化锆(YSZ)薄膜。在激光照射下，从衬底周围的反应区观察到类似等离子体的强光发射。沉积速率从1微米/小时显著提高到230微米/小时，发光区的电荷主要由正离子和负离子组成，电子很少。发射的光具有类似于普朗克分布的连续光谱。
Yttria-stabilized zirconia (YSZ) films were prepared by a laser Chemical vapor deposition (CVD) process. A plasma-like strong light emission was observed from a reaction zone around a substrate by laser irradiation. The deposition rates were significantly increased from 1 to 230 µm/h. The charges in the light-emitting zone consisted of mainly positive and negative ions, but electrons scarcely existed. The emitted light had a continuous spectrum similar to the Planck distribution.