A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide
A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide
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DOI：
10.1063/1.4964300
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发表时间：
2016-09-01
期刊：
影响因子：
1.6
通讯作者：
Mueller, J.
中科院分区：
文献类型：
--
作者：
Riedel, S.;Polakowski, P.;Mueller, J.
氧化铪基薄膜的铁电性能由于其与超薄薄膜和CMOS的兼容性而恢复了铁电存储器的缩放潜力。然而，与铁电性相关的各种物理现象允许这些材料比铁电存储器更广泛的应用。特别是混合HfxZr 1-xO 2薄膜表现出广泛的组成范围内的铁电相稳定性，并提供了可能性，定制材料的性能，用于多种应用。在这里，它示出的HfxZr 1-xO 2的有限的热稳定性和厚膜的能力，可以通过使用氧化铝夹层的层压方法克服。(C)2016年作者。
Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film-and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers. (C) 2016 Author(s).