Electronic properties and optical-absorption spectra of GaAs-AlxGa1-xAs quantum wells in externally applied electric fields.
Electronic properties and optical-absorption spectra of GaAs-AlxGa1-xAs quantum wells in externally applied electric fields.
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GaAs-AlxGa1-xAs 量子阱在外加电场中的电子特性和光学吸收光谱。
DOI：
10.1103/physrevb.35.2308
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发表时间：
1987
影响因子：
3.7
通讯作者：
Bajaj Kk
中科院分区：
文献类型：
--
作者：
Sanders Gd;Bajaj Kk
本文采用一种结合价子带混合效应的理论，研究了GaAs-Al x Ga 1− x As量子威尔斯阱在外电场中的电子和光学性质.计算了电场诱导的电导和价电子带结构、激子结合能、允许跃迁（Δn= 0）和禁戒跃迁（Δ n = 0）的激子振子强度以及总吸收谱的变化。光学跃迁与几个传导和价带被认为是。计算的电子和光学性质被发现是电子和空穴包络波函数的重叠和价子带混合的影响之间的相互作用的结果。在电场作用下，量子阱系统中的克雷默简并度会因价子带混合而发生大的分裂。电场引起的激子结合能和振子强度的变化主要是由电子和空穴波函数之间的重叠程度的变化引起的。将上述结果与假设没有价带混合效应的结果进行了比较，结果表明它们在定性和定量上都不同。我们的结果与现有的实验数据进行了简要比较。
A study of the electronic and optical properties of GaAs-Al x Ga 1− x As quantum wells in external electric fields is presented using a theory which incorporates valence-subband-mixing effects. Electric-field-induced changes in the conduction-and valence-subband structure, exciton binding energies, exciton oscillator strengths of both allowed (Δn= 0) and forbidden (Δ≠ 0) transitions, and the total absorption spectrum are calculated. Optical transitions associated with several conduction and valence subbands are considered. Computed electronic and optical properties are found to be the result of an interplay between the effects of the overlap of electron and hole envelope wave functions and the valence-subband mixing. Valence-subband mixing results in a large splitting of the Kramer’s degeneracy in a quantum-well system in the presence of an electric field. The electric-field-induced changes in the computed exciton binding energies and oscillator strengths are caused mainly by the variation of the degree of overlap between the electron and hole wave functions. The foregoing results are compared with those obtained assuming no valence-band-mixing effects and are shown to be both qualitatively and quantitatively different. A brief comparison of our results with available experimental data is presented.