Etching of polyethylene terephthalate thin films by neutral oxygen atoms in the late flowing afterglow of oxygen plasma
Etching of polyethylene terephthalate thin films by neutral oxygen atoms in the late flowing afterglow of oxygen plasma
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氧等离子体晚流余辉中中性氧原子刻蚀聚对苯二甲酸乙二醇酯薄膜
DOI：
10.1002/sia.5064
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发表时间：
2012
影响因子：
1.7
通讯作者：
M. Mozetič
中科院分区：
文献类型：
--
作者：
A. Vesel;Metod Kolar;Aleš Doliška;K. Stana;M. Mozetič
将聚对苯二甲酸乙二醇酯薄膜沉积在石英晶体上并暴露于氧原子中以研究其蚀刻特性并量化蚀刻速率。氧（O）原子是通过使分子氧穿过在微波放电中产生的等离子体而产生的。放电功率固定为250 W，而氧气压力为50 Pa。在暴露于氧原子之前，将聚对苯二甲酸乙二醇酯（PET）的聚合物薄膜均匀地沉积在直径为12 mm的晶体上。将晶体安装在石英晶体微量天平上以精确测定聚合物膜的厚度。聚合物膜在流动的余辉中暴露于O原子。使用安装在样品旁边的钴催化探针测量了O原子的密度，确定为1.2 × 1021 m-3。用O原子处理样品达120分钟的不同时间。膜的厚度随处理时间线性下降。处理90分钟后，完全去除65 nm厚的聚合物膜。因此，蚀刻速率为0.5 nm/min，因此O原子与样品中原子之间的相互作用几率极低，仅为1.4 × 10-6。通过原子力显微镜和X射线光电子能谱研究了不同时间处理的样品，以检查O原子在流动余辉中的蚀刻特性。版权所有© 2012约翰威利父子有限公司.
Films of polyethylene terephthalate were deposited on quartz crystals and exposed to oxygen atoms to study their etching characteristics and quantify the etching rate. Oxygen (O) atoms were created by passing molecular oxygen through plasma created in a microwave discharge. The discharge power was fixed at 250 W, while the pressure of oxygen was 50 Pa. Before exposure to oxygen atoms, a thin polymer film of polyethylene terephthalate (PET) was deposited uniformly over a crystal with a diameter of 12 mm. The crystal was mounted on a quartz crystal microbalance to accurately determine the thickness of the polymer film. The polymer film was exposed to O atoms in the flowing afterglow. The density of O atoms was measured with a cobalt catalytic probe mounted next to the sample and was determined to be 1.2 × 1021 m–3. Samples were treated with O atoms for different periods of up to 120 min. The thickness of the film decreased linearly with treatment time. After 90 min of treatment, a 65‐nm‐thick polymer film was completely removed. Therefore, the etching rate was 0.5 nm/min, so the interaction probability between an O atom and an atom in the sample was extremely low, just 1.4 × 10–6. Samples treated for different periods were investigated by atomic force microscopy and X‐ray photoelectron spectroscopy to examine the etching characteristics of O atoms in the flowing afterglow. Copyright © 2012 John Wiley & Sons, Ltd.