High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years
High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years
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高效、高击穿 AlGaN/GaN HEMT，寿命超过 20 年
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
K. Riepe
中科院分区：
文献类型：
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作者：
P. Waltereit;W. Bronner;R. Quay;M. Dammann;S. Muller;M. Mikulla;F. van Rijs;T. Rodle;K. Riepe
目前以LDMOS技术为主的AlGaN/GaN HEMT在未来高效的下一代移动通信基站系统中的应用引起了人们的极大兴趣。在发射机中使用GaN技术，基础设施设备制造商将从系统性能和灵活性的重大改进中受益。AlGaN/gan HEMT使创新的电路概念和收发器架构(例如开关模式功率放大器，SMPA)具有高效率和高工作偏置。然而，除了性能之外，要想具有竞争力，赶上甚至超过其他技术的设备可靠性将是至关重要的。为了实现这一目标，优化外延生长和工艺技术是至关重要的。
AlGaN/GaN HEMTs on various substrates have raised a lot of interest for the application in future high-efficiency base station systems for next generation mobile communication, currently dominated by LDMOS technology. Using GaN technology in a transmitter, infrastructure equipment manufacturers will benefit from major improvements in system performance and flexibility. AlGaN/GaN HEMTs enable innovative circuit concepts and transceiver architecture (e.g. switch mode power amplifiers, SMPA) with high efficiency and high operating bias. However, besides performance it will be crucial to match or even exceed the device reliability of other technologies in order to be competitive. To meet this goal, it is vital to optimize epitaxial growth as well as process technology.